| PART |
Description |
Maker |
| STW12NA60 STH12NA60_FI 3561 STH12NA60 STH12NA60FI |
From old datasheet system
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin
N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET)
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| 2N930 2N930A |
Supercapacitor; Capacitance:0.047F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin
Supercapacitor; Capacitance:0.2F; Series:EDL; Voltage Rating:3.3VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:SMT Radial Lead; Termination:Radial Leaded; ESR:200ohm; Operating Temp. Max:60 C RoHS Compliant: Yes
AMPLIFIER TRANSISTOR (NPN SILICON)
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| HCC40107BDG HCC4017BDG HCC4017BDT HCC4027BDG HCC40 |
Rad-hard dual 2-input NAND buffer/driver
Rad-hard decade counter/divider
Rad-hard dual J-K master-slave Flip-Flop
Rad-hard triple 3-input NAND gate
Rad-hard 4-bit magnitude comparator
Rad-hard triple 3-input AND gate
Rad-hard hex buffer 3-state non-inverter
Rad-hard hex schmitt trigger
Rad-hard hex inverting buffer/converter
Rad-hard hex inverter
|
ST Microelectronics
|
| STD2NA50 4862 STD2NA50-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Supercapacitor; Capacitance:0.047F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:120ohm; Lead Pitch:5mm; Operating Temp. Max:70 C RoHS Compliant: Yes
N-CHANNEL MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
ST Microelectronics
|
| B0810-2R5105 B0820-2R5225 B1030-2R5685 B0510-2R522 |
Aerogel Capacitors
|
ETC
|
| BWR12/830D12 BWR12/830D48 BWR9/850D5 BWR12/625D5 |
Rad-hard 8-channel multiplexer (3-state)
Rad-hard dual 4 channel multiplexer 3 state output
Rad-hard octal D-type latch with 3 state output non inverting
Rad-hard octal bus transceiver with 3 state outputs (non inverted) 模拟IC
|
STMicroelectronics N.V.
|
| BWP-12/125-D12 BWP-12/125-D48 BWP-5/250-D48 BWP-15 |
Rad-hard 8 bit PISO shift register
Rad-hard hex D-type flip flop with clear DC - DC电压转换
Rad-hard quad D-type flip flop with clear 型DC - DC电压转换
|
Sumida, Corp.
3M Company
|
| HD1173.PDF Q68000-A7871 A0555 HD1131 HD1133O HD113 |
1-Digit LED 7 Segment IC-Compatible W...
0.51(13MM) SEVEN SEGMENT NUMERIC DISPLAY
Seven Segment Display 13mm (0.59'')
From old datasheet system
CAP CER DISC 15PF 6KV SL 5% RAD
CAP CER DISC 12PF 6KV SL 5% RAD
CAP CER DISC 10PF 6KV SL 5% RAD
7 SEG NUMERIC DISPLAY, SUPER RED, 13 mm
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
INFINEON TECHNOLOGIES AG
SIEMENS A G
|
| MH32S72DBFA-6 |
Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to 105 C; Capacitance:8800uF
|
Mitsubishi Electric Corporation
|
| CDR11BP100AGYS CDR11BP101AGYS CDR11BP102AGYS CDR11 |
CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.00001 uF, SURFACE MOUNT CHIP
CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.0001 uF, SURFACE MOUNT CHIP
CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.001 uF, SURFACE MOUNT CHIP
CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.00075 uF, SURFACE MOUNT CHIP
CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.000075 uF, SURFACE MOUNT CHIP
CAP 2200PF 50V 5% X7R SMD-1111 WAFFLE-PAK BASE/BARR/SOLDER MICROWAVE R-MIL-PRF-55681 CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.0022 uF, SURFACE MOUNT
|
AVX, Corp.
|
